Journal Of Computational Electronics

SCIE

國際簡稱：J COMPUT ELECTRON 參考譯名：計(jì)算電子學(xué)雜志

主要研究方向：ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED 非預(yù)警期刊審稿周期： 12周，或約稿

《計(jì)算電子學(xué)雜志》(Journal Of Computational Electronics)是一本由Springer US出版的以ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED為研究特色的國際期刊，發(fā)表該領(lǐng)域相關(guān)的原創(chuàng)研究文章、評論文章和綜述文章，及時(shí)報(bào)道該領(lǐng)域相關(guān)理論、實(shí)踐和應(yīng)用學(xué)科的最新發(fā)現(xiàn)，旨在促進(jìn)該學(xué)科領(lǐng)域科學(xué)信息的快速交流。該期刊是一本未開放期刊，近三年沒有被列入預(yù)警名單。

4區(qū) 中科院分區(qū)
Q3 JCR分區(qū)
117 年發(fā)文量
2.2 IF影響因子
未開放 是否OA
27 H-index
2002 創(chuàng)刊年份
6 issues per year 出版周期
English 出版語言

he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.

In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.

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Journal Of Computational Electronics期刊信息

ISSN：1569-8025
出版語言：English
是否OA：未開放
E-ISSN：1572-8137
出版地區(qū)：UNITED STATES
是否預(yù)警：否
出版商：Springer US
出版周期：6 issues per year
創(chuàng)刊時(shí)間：2002
開源占比：0.0676
Gold OA文章占比：8.61%
OA被引用占比：0.025
出版國人文章占比：0.08
出版撤稿占比：0.0053...
研究類文章占比：100.00%

Journal Of Computational Electronics CiteScore評價(jià)數(shù)據(jù)（2024年最新版）

CiteScore

SJR

SNIP

CiteScore 指數(shù)

4.5

0.294

0.824

學(xué)科類別	分區(qū)	排名	百分位
大類：Mathematics 小類：Modeling and Simulation	Q2	89 / 324	72%
大類：Mathematics 小類：Electrical and Electronic Engineering	Q2	295 / 797	63%
大類：Mathematics 小類：Atomic and Molecular Physics, and Optics	Q2	91 / 224	59%
大類：Mathematics 小類：Electronic, Optical and Magnetic Materials	Q2	121 / 284	57%

名詞解釋：CiteScore 是衡量期刊所發(fā)表文獻(xiàn)的平均受引用次數(shù)，是在 Scopus 中衡量期刊影響力的另一個(gè)指標(biāo)。當(dāng)年CiteScore 的計(jì)算依據(jù)是期刊最近4年（含計(jì)算年度）的被引次數(shù)除以該期刊近四年發(fā)表的文獻(xiàn)數(shù)。例如，2022年的 CiteScore 計(jì)算方法為：2022年的 CiteScore =2019-2022年收到的對2019-2022年發(fā)表的文件的引用數(shù)量÷2019-2022年發(fā)布的文獻(xiàn)數(shù)量注：文獻(xiàn)類型包括：文章、評論、會議論文、書籍章節(jié)和數(shù)據(jù)論文。

Journal Of Computational Electronics中科院評價(jià)數(shù)據(jù)

中科院 2023年12月升級版

Top期刊	綜述期刊	大類學(xué)科		小類學(xué)科
否	否	工程技術(shù)	4區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣 PHYSICS, APPLIED 物理：應(yīng)用	4區(qū) 4區(qū)

中科院 2022年12月升級版

Top期刊	綜述期刊	大類學(xué)科		小類學(xué)科
否	否	工程技術(shù)	4區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣 PHYSICS, APPLIED 物理：應(yīng)用	4區(qū) 4區(qū)

中科院 2021年12月舊的升級版

Top期刊	綜述期刊	大類學(xué)科		小類學(xué)科
否	否	工程技術(shù)	4區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣 PHYSICS, APPLIED 物理：應(yīng)用	4區(qū) 4區(qū)

中科院 2021年12月基礎(chǔ)版

Top期刊	綜述期刊	大類學(xué)科		小類學(xué)科
否	否	工程技術(shù)	4區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣 PHYSICS, APPLIED 物理：應(yīng)用	4區(qū) 4區(qū)

中科院 2021年12月升級版

Top期刊	綜述期刊	大類學(xué)科		小類學(xué)科
否	否	工程技術(shù)	4區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣 PHYSICS, APPLIED 物理：應(yīng)用	4區(qū) 4區(qū)

中科院 2020年12月舊的升級版

Top期刊	綜述期刊	大類學(xué)科		小類學(xué)科
否	否	工程技術(shù)	4區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣 PHYSICS, APPLIED 物理：應(yīng)用	4區(qū) 4區(qū)

Journal Of Computational Electronics JCR評價(jià)數(shù)據(jù)（2023-2024年最新版）

按JIF指標(biāo)學(xué)科分區(qū)	收錄子集	分區(qū)	排名	百分位
學(xué)科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	183 / 352	48.2%
學(xué)科：PHYSICS, APPLIED	SCIE	Q3	104 / 179	42.2%

按JCI指標(biāo)學(xué)科分區(qū)	收錄子集	分區(qū)	排名	百分位
學(xué)科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	190 / 354	46.47%
學(xué)科：PHYSICS, APPLIED	SCIE	Q3	100 / 179	44.41%

Journal Of Computational Electronics歷年數(shù)據(jù)統(tǒng)計(jì)

影響因子

中科院分區(qū)

Journal Of Computational Electronics中國學(xué)者發(fā)文選摘

1、Exploring the electrical performance of advanced and environmental-friendly novel nanomaterial wires in generator winding through finite element analysis
Author: Hassan, Atazaz; Chen Quanfang; Abbas, Sajid; Akbar, Hussain; Luo Youming; Liu Jie

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 1, pp. 17-28. DOI: 10.1007/s10825-022-01965-y
2、Ab-initio characterization of iron-embedded nitrogen-doped graphene as a toxic gas sensor
Author: Nosheen, Uzma; Jalil, Abdul; Ilyas, Syed Zafar; Ahmed, Sarfraz; Illahi, Ahsan; Rafiq, Muhammad Aftab

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 1, pp. 116-127. DOI: 10.1007/s10825-022-01977-8
3、Efficient modeling approach for simulating multi-physics responses of an ion-sensitive field-effect transistor using artificial neural networks
Author: Xie, Jianan; Zhou, Yuanguo; Liang, Bingyang; Ren, Qiang; Javaid, Fawad

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 1, pp. 242-249. DOI: 10.1007/s10825-022-01979-6
4、Critical parameters of gate control in NC-FinFET on GaAs
Author: Li, Henghui; Jia, Tingting; Zhang, Chong; Yu, Ziwei; Guo, Quansheng; Zhao, Hongyang; Jia, Chunyang; Yu, Shuhui; Sun, Rong

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 1, pp. 164-177. DOI: 10.1007/s10825-022-01957-y
5、Velocity-field characteristics of MgxZn1-xO/ZnO heterostructures
Author: Liu, DongFeng

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 2, pp. 603-611. DOI: 10.1007/s10825-022-01999-2
6、Storm surge level prediction based on improved NARX neural network
Author: Li, Lianbo; Wu, Wenhao; Zhang, Wenjun; Zhu, Zhenyu; Li, Zhengqian; Wang, Yihan; Niu, Sen

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 2, pp. 783-804. DOI: 10.1007/s10825-023-02005-z
7、Ultrahigh FOM and multiple Fano resonances in MIM waveguide systems with half-ring and rectangular cavities
Author: Wang, Yunyan; Huo, Yiping; Cui, Pengfei; Song, Meina; Zhao, Chen; Liao, Zuxiong; Liu, Tong; Zhang, Zhongyue; Xie, You

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 3, pp. 839-848. DOI: 10.1007/s10825-023-02022-y
8、Nonlocalization of singular potentials in quantum dynamics
Author: Shao, Sihong; Su, Lili

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. , Issue , pp. -. DOI: 10.1007/s10825-023-02042-8